Microelectronic Research and Development Center Novosibirs
Новосибирский Филиал Федерального Государственного Бюджетного Учреждения Науки Института Физики Полупроводников имени А. В. Ржанова СО РАН «Конструкторско-Технологический Институт Прикладной Микроэлектроники»
Compliance Profile
"Compliance Notice: Microelectronic Research and Development Center Novosibirs is a listed Entity subject to restrictive measures. Active records found in: CH SECO SANCTIONS, US TRADE CSL, EU SANCTIONS MAP, EU JOURNAL SANCTIONS, JP METI RU. Financial due diligence required."
Banking Impact
This entity is isolated from mainstream financial networks. Transfers referencing their identifiers are systematically rejected under CH SECO SANCTIONS enforcement protocols.
Legal Status
Under current regulations, providing goods, services, or technology to this subject is heavily restricted. Internal legal counsel review is highly recommended.
Official Registry Metadata
Source: OpenSanctions| Full Legal Name | Microelectronic Research and Development Center Novosibirs |
| Cyrillic Alias | Новосибирский Филиал Федерального Государственного Бюджетного Учреждения Науки Института Физики Полупроводников имени А. В. Ржанова СО РАН «Конструкторско-Технологический Институт Прикладной Микроэлектроники» |
| Sanction Program | CH SECO SANCTIONSUS TRADE CSLEU SANCTIONS MAPEU JOURNAL SANCTIONSJP METI RU |
| Enforcement Type | Full Blocking Sanctions |
Associated Subject Network
Due Diligence Inquiry
Independent Risk Assessment
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