Active SanctioncompanyID: NK-6mWPPVmJzBchaEjgzqcZeB

Microelectronic Research and Development Center Novosibirs

Новосибирский Филиал Федерального Государственного Бюджетного Учреждения Науки Института Физики Полупроводников имени А. В. Ржанова СО РАН «Конструкторско-Технологический Институт Прикладной Микроэлектроники»

Primary List
CH SECO SANCTIONS
Jurisdiction
Russia / CIS
Risk Tier
CRITICAL
Last Updated
2026-02-23

Compliance Profile

"Compliance Notice: Microelectronic Research and Development Center Novosibirs is a listed Entity subject to restrictive measures. Active records found in: CH SECO SANCTIONS, UA NSDC SANCTIONS, EU SANCTIONS MAP, JP METI RU, US TRADE CSL. Financial due diligence required."

Banking Impact

Entities listed on CH SECO SANCTIONS are subject to immediate asset freezing. International wire transfers (SWIFT) involving this entity will be automatically flagged and blocked by correspondent banks.

Legal Status

Prohibited from engaging in commercial transactions with US/EU persons. Enhanced Due Diligence (EDD) is mandatory for any associated counterparty.

Official Registry Metadata

Source: OpenSanctions
Full Legal NameMicroelectronic Research and Development Center Novosibirs
Cyrillic AliasНовосибирский Филиал Федерального Государственного Бюджетного Учреждения Науки Института Физики Полупроводников имени А. В. Ржанова СО РАН «Конструкторско-Технологический Институт Прикладной Микроэлектроники»
Sanction Program
CH SECO SANCTIONSUA NSDC SANCTIONSEU SANCTIONS MAPJP METI RUUS TRADE CSL
Enforcement TypeFull Blocking Sanctions

Due Diligence Inquiry

Independent Risk Assessment

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